CMOS image sensor having double gate insulator therein

US8143626B2 · kind B2 · utility

Assignee

• Intellectual Ventures II LLC · US

Inventor

• Ju-Il Lee · Eden Prairie, US

Key dates

• Filing date: Mar 12, 2010
• Grant date: Mar 27, 2012
• Expiry date: Apr 13, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/803

Abstract

A method for manufacturing a CMOS image sensor includes: preparing a semiconductor substrate incorporating therein a p-type epitaxial layer by epitaxially growing up an upper portion of the semiconductor substrate; forming a pixel array in one predetermined location of the semiconductor substrate, the pixel array having a plurality of transistors and a photodiode therein, wherein each transistor employs a gate insulator with a thickness ranging from 40 Å to 90 Å; and forming a logic circuit in the other predetermined location of the semiconductor substrate, the logic circuit having at least one transistor, wherein the transistor employs a gate insulator with a thickness ranging from 5 Å to 40 Å.