Variable resistance memory device and system thereof
US8143653B2 · kind B2 · utility
8Cited by
8References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2009 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Feb 10, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase-change random access memory device is provided. The phase-change random access memory device includes a global bit line connected to a write circuit and a read circuit, multiple local bit lines, each being connected to multiple phase-change memory cells, and multiple column select transistors selectively connecting the global bit line with each of the multiple local bit lines, each column select transistor having a resistance that varies depending on its distance from the write circuit and the read circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.