Charge storage nanostructure
US8143658B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2008 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Mar 26, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention relates to a nanostructured device for charge storage. In particular the invention relates to a charge storage device that can be used for memory applications. According to the invention the device comprise a first nanowire with a first wrap gate arranged around a portion of its length, and a charge storing terminal connected to one end, and a second nanowire with a second wrap gate arranged around a portion of its length. The charge storing terminal is connected to the second wrap gate, whereby a charge stored on the charge storing terminal can affect a current in the second nanowire. The current can be related to written (charged) or unwritten (no charge) state, and hence a memory function is established.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.