Vertical trench capacitor, chip comprising the capacitor, and method for producing the capacitor

US8143659B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventor

• Stefan Pompl · Landshut, DE

Key dates

• Filing date: Apr 14, 2008
• Grant date: Mar 27, 2012
• Expiry date: Dec 3, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/212

Abstract

A capacitor is described which includes a substrate with a doped area of the substrate forming a first electrode of the capacitor. A plurality of trenches is arranged in the doped area of the substrate, the plurality of trenches forming a second electrode of the capacitor. An electrically insulating layer is arranged between each of the plurality of trenches and the doped area for electrically insulating the trenches from the doped area. The doped area includes first open areas and at least one second open area arranged between neighboring trenches of the plurality of trenches, wherein the at least one open area is arranged below the at least one substrate contact. A shortest first distance between neighboring trenches is separated by the first open areas and is shorter than a shortest second distance between neighboring trenches separated by the at least one second open area.