Magnetoresistive element
US8143684B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2011 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Jan 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.