Method of operating magnetic random access memory device
US8144504B2 · kind B2 · utility
6Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2009 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Mar 5, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltage of the switch structure when supplying current to write data to the magnetoresistance structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.