Method of measuring a resistance of a resistive memory device
US8144507B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2010 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Sep 16, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0007
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of measuring a resistance of a memory cell in a resistive memory device can be provided by applying a data write pulse to a selected cell of the resistive memory device, applying a resistance read pulse to the selected cell after a delay time measured from a time of applying the data write pulse, measuring a drop voltage at the cell responsive to a pulse waveform output when applying the resistance read pulse to the selected cell, measuring a total current through the cell using the drop voltage and an internal resistance of a test device coupled to the cell, and determining a resistance of the resistive memory device using the total current and a voltage of the resistance read pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.