Reflective optical element for EUV lithography device
US8144830B2 · kind B2 · utility
7Cited by
6References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2009 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Aug 5, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A reflective optical element exhibits an increase in the maximum reflectivity at operating wavelengths in the extreme ultraviolet or soft x-ray wavelength range. A first additional intermediate layer (23a, 23b) and a second additional intermediate layer (24a, 24b) are provided between the absorber layer (22) and the spacer layer (21), wherein the first additional intermediate layer increases the reflectivity and the second additional intermediate layer (24a,b) prevents chemical interaction between the first additional intermediate layer (23a,b) and the adjoining spacer layer (21) and/or the absorber layer (22).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.