Patent · US Active

Reading memory cells using multiple thresholds

US8145984B2 · kind B2 · utility

51Cited by
349References
33Claims
0Family size

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Inventors

Key dates

Filing dateMay 24, 2011
Grant dateMar 27, 2012
Priority date
Expiry dateMay 24, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C27/005
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A method for operating a memory (28) includes storing data, which is encoded with an Error Correction Code (ECC), in analog memory cells (32) of the memory by writing respective analog input values selected from a set of nominal values to the analog memory cells. The stored data is read by performing multiple read operations that compare analog output values of the analog memory cells to different, respective read thresholds so as to produce multiple comparison results for each of the analog memory cells. At least two of the read thresholds are positioned between a pair of the nominal values that are adjacent to one another in the set of the nominal values. Soft metrics are computed responsively to the multiple comparison results. The ECC is decoded using the soft metrics, so as to extract the data stored in the analog memory cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.