Crystal puller and method for growing a monocrystalline ingot
US8147613B2 · kind B2 · utility
3Cited by
41References
39Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 10, 2003 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | May 6, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crystal puller for growing monocrystalline ingots includes a side heater adjacent a crucible for heating the crucible and a melt heat exchanger sized and shaped for surrounding the ingot and disposed adjacent a surface of the melt. The heat exchanger includes a heat source having an area for radiating heat to the melt for controlling heat transfer at the upper surface of the melt. The melt heat exchanger is adapted to reduce heat loss at the exposed upper surface portion. Methods for growing single crystal silicon crystals having desired defect characteristics are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.