Method of fabricating capacitor
US8148231B2 · kind B2 · utility
1Cited by
7References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2008 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Aug 1, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.