Lateral growth method for defect reduction of semipolar nitride films
US8148244B2 · kind B2 · utility
2Cited by
13References
19Claims
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Key dates
| Filing date | Jul 13, 2006 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Jan 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A lateral growth method for defect reduction of semipolar nitride films. The process steps include selecting a semipolar nitride plane and composition, selecting a suitable substrate for growth of the semipolar nitride plane and composition, and applying a selective growth process in which the semipolar nitride nucleates on some areas of the substrate at the exclusion of other areas of the substrate, wherein the selective growth process includes lateral growth of nitride material by a lateral epitaxial overgrowth (LEO), sidewall lateral epitaxial overgrowth (SLEO), cantilever epitaxy or nanomasking.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.