Method for forming dielectric films
US8148275B2 · kind B2 · utility
2Cited by
1References
6Claims
0Family size
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Key dates
| Filing date | Dec 18, 2008 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Jan 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02323
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming dielectric films including metal nitride silicate on a silicon substrate, comprises a first step of depositing a film containing metal and silicon on a silicon substrate in a non-oxidizing atmosphere using a sputtering method; a second step of forming a film containing nitrogen, metal and silicon by nitriding the film containing metal and silicon; and a third step of forming a metal nitride silicate film by oxidizing the film containing nitrogen, metal and silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.