Resistive memory device and method of fabricating the same
US8148708B2 · kind B2 · utility
3Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2008 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Apr 23, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/943
Abstract
A resistive memory device includes a first conductive line on a substrate, a vertical selection diode comprising a nanowire or a nanotube and being arranged over the first conductive line, a resistive element including a resistive layer arranged over the vertical selection diode; and a second conductive line arranged over the resistive element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.