Magnetoresistive effect element and thin-film magnetic head with the magnetoresistive effect element
US8149547B2 · kind B2 · utility
3Cited by
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17Claims
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Key dates
| Filing date | Mar 13, 2008 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Sep 27, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An MR element includes a pinned layer, a free layer and a nonmagnetic space layer or a tunnel barrier layer sandwiched between the pinned layer and the free layer. A magnetization direction of the free layer is substantially perpendicular to a film surface thereof, and a magnetization direction of the pinned layer is substantially parallel to a film surface thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.