Multi-level phase change random access memory device
US8149608B2 · kind B2 · utility
15Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Jun 26, 2009 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Mar 6, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A multi-level phase change random access memory device includes a first electrode, a second electrode, and a phase change material disposed between the first electrode and the second electrode. The multi-level phase change random access memory device also includes a variable bias source coupled to the first electrode. The variable bias source provides a respective bias applied at the first electrode to form a portion of the phase change material to have one of an amorphous state and different crystal states for storing multi-bits data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.