Resistance variable memory device
US8149613B2 · kind B2 · utility
1Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2009 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Sep 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistance variable memory device is provided and includes a resistance variable memory cell that writes data by utilizing a spin transfer effect based on an injection current. The memory device also includes a driving circuit that generates a combined pulse of a plurality of write pulses and an offset pulse defining the level between the write pulses and supplies the combined pulse to the memory cell at the time of the writing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.