Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereof
US8153832B2 · kind B2 · utility
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Key dates
| Filing date | Apr 3, 2006 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Aug 22, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F7/12
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Pentakis(dimethylamino) disilane with general formula (1): Si2(NMe2)5Y, where Y is selected from the group comprising H, Cl or an amino group its preparation method and its use to manufacture gate dielectric films or etch-stop dielectric films of SiN or SiON.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.