Semiconductor device with semiconductor epitaxial layers buried in source/drain regions, and fabrication method of the same
US8154050B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 7, 2008 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Apr 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/015
Abstract
A semiconductor device in which semiconductor epitaxial layers are embedded in the source/drain regions includes an element formation region formed in the major surface of a semiconductor substrate, a gate electrode formed on a part of the element formation region, the semiconductor epitaxial layers formed in the source/drain regions of the element formation region so as to sandwich the channel region below the gate electrode, and silicide layers formed on the gate electrode and semiconductor epitaxial layers. Each semiconductor epitaxial layer has a three-layered structure in which first semiconductor films different in material or composition from the semiconductor substrate sandwich a second semiconductor film having a silicidation reactivity higher than that of the first semiconductor films. Each silicide layer extends to the second semiconductor film along the interface between the semiconductor substrate and semiconductor epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.