Integrated electronic circuit including a thin film portion based on hafnium oxide
US8154091B2 · kind B2 · utility
1Cited by
2References
28Claims
0Family size
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Key dates
| Filing date | Apr 25, 2008 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Apr 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/662
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated electronic circuit has a thin layer portion based on hafnium oxide. This portion additionally contains magnesium atoms, so that the portion is in the form of a hafnium-and-magnesium mixed oxide. Such a portion has a high dielectric constant and a very low leakage current. It is particularly suitable for forming a part of a gate insulation layer of a MOS transistor or a part of a MIM capacitor dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.