Method of reading nonvolatile memory device and nonvolatile memory device for implementing the method
US8154919B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2009 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Oct 1, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device includes a read margin critical value calculation unit configured to calculate a critical value of a read margin between a read voltage and a threshold voltage of a specific cell, an interference value calculation unit configured to calculate an interference value affecting the threshold voltage of the specific cell, a comparison unit configured to compare the critical value and the interference value and to output a result of the comparison, and a data selection unit configured to output either first data, read from the specific cell using a first read voltage, or second data, read from the specific cell using a second read voltage, based on the result outputted from the comparison unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.