Photonic crystal laser and method of manufacturing photonic crystal laser
US8155163B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2008 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Feb 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photonic crystal laser comprises an n-type substrate, an n-type clad layer, an active layer, a p-type clad layer, a photonic crystal layer, a p-type electrode, an n-type electrode and a package member. The n-type clad layer is formed on a first surface of the n-type substrate. The active layer is formed on the n-type clad layer. The p-type clad layer is formed on the active layer. The photonic crystal layer is formed between the n-type clad layer and the active layer or between the active layer and the p-type clad layer, and includes a photonic crystal portion. The p-type electrode is formed on the photonic crystal portion. The n-type electrode is formed on a second surface, and includes a light-transmitting portion arranged on a position opposed to the photonic crystal portion and an outer peripheral portion having lower light transmittance than the light-transmitting portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.