Memory device with error correction capability and efficient partial word write operation
US8156402B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2007 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Jun 2, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F11/1008
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device comprises a memory array and error correction circuitry coupled to the memory array. The memory device is configured to perform at least a partial word write operation and a read operation, with the partial word write operation comprising a read phase and a write phase. The write phase of the partial word write operation occurs in the same clock cycle of the memory device as the read operation by, for example, time multiplexing bitlines of the memory array within the clock cycle between the write phase of the partial word write operation and the read operation. Thus, the partial word write operation appears to a higher-level system incorporating or otherwise utilizing the memory device as if that operation requires only a single clock cycle of the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.