Methods of forming graphene/(multilayer) boron nitride for electronic device applications
US8158200B2 · kind B2 · utility
12Cited by
1References
20Claims
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Key dates
| Filing date | Aug 18, 2009 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Jun 9, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/261
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a substrate-mediated assembly for graphene structures. According to an embodiment, long-range ordered, multilayer BN(111) films can be formed by repeated atomic layer deposition (ALD) of a boron-halide or organoborane precursor and NH3 onto a substrate followed by a high temperature anneal. Graphene can then be formed on an ordered BN(111) film by depositing carbon on the ordered surface of the BN(111) film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.