Jeffry Kelber
21Patents
4h-index
13Co-inventors
60Inventor score
Filing activity: Apr 8, 1987 → Apr 3, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6114032A | Films for use in microelectronic devices and methods of producing same | Emerging Cross-Sectional Technologies | 19 | Expired |
| US8158200B2 | Methods of forming graphene/(multilayer) boron nitride for electronic device applications | Emerging Cross-Sectional Technologies | 12 | Active |
| US9331198B2 | Controlled epitaxial boron nitride growth for graphene based transistors | Electricity | 5 | Active |
| US8748957B2 | Coherent spin field effect transistor | Electricity | 4 | Active |
| US8685802B2 | Graphene formation on dielectrics and electronic devices formed therefrom | Electricity | 4 | Active |
| US6790476B1 | Method of adhesion between an oxide layer and a metal layer | Chemistry; Metallurgy | 4 | Expired |
| US4861408A | Modification of polymeric surface for improved adhesion via electron beam exposure | Chemistry; Metallurgy | 4 | Expired |
| US8338825B2 | Graphene/(multilayer) boron nitride heteroepitaxy for electronic device applications | Emerging Cross-Sectional Technologies | 3 | Active |
| US7534967B2 | Conductor structures including penetrable materials | Electricity | 3 | Expired |
| US6306495A | Film for use in microelectronic devices and methods of producing same | Emerging Cross-Sectional Technologies | 2 | Expired |
| US9761660B2 | Manufacturable spin and spin-polaron interconnects | Electricity | 1 | Active |
| US8946692B2 | Graphene (multilayer) boron nitride heteroepitaxy for electronic device applications | Emerging Cross-Sectional Technologies | 1 | Active |
| US9564579B2 | Graphene magnetic tunnel junction spin filters and methods of making | Electricity | 1 | Active |
| US9620654B2 | Coherent spin field effect transistor | Electricity | 1 | Active |
| US9379232B2 | Magneto-electric voltage controlled spin transistors | Electricity | 1 | Active |
| US9614149B2 | Coherent spin field effect transistor | Electricity | 0 | Active |
| US9624600B2 | Direct graphene growth on metal oxides by molecular epitaxy | Electricity | 0 | Active |
| US9324960B2 | Semiconducting alloy polymers formed from orthocarborane and 1,4-diaminobenzene | Emerging Cross-Sectional Technologies | 0 | Active |
| US9202899B2 | Voltage switchable non-local spin-FET and methods for making same | Electricity | 0 | Active |
| US9748340B2 | Graphene field effect transistor | Electricity | 0 | Active |
| US9324938B2 | Boron carbide films exhibits extraordinary magnetoconductance and devices based thereon | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.