Methods of forming pattern structures and methods of manufacturing semiconductor devices using the same
US8158445B2 · kind B2 · utility
3Cited by
1References
19Claims
0Family size
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Key dates
| Filing date | Nov 5, 2010 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Nov 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
Methods of forming pattern structures and methods of manufacturing memory devices using the same are provided, the methods of forming pattern structures include forming an etching object layer on a substrate and performing a plasma reactive etching process on the etching object layer using an etching gas including at least ammonia (NH3) gas. The etching object layer includes a magnetic material or a phase change material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.