Thin-film transistor and method of manufacturing the same
US8158976B2 · kind B2 · utility
32Cited by
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17Claims
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Key dates
| Filing date | Feb 26, 2010 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Aug 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
Example embodiments relate to thin-film transistors (TFT) and methods for fabricating the same. A thin-film transistor according to example embodiments may include a gate, a gate insulation layer, a channel layer including a first oxide semiconductor layer and a second oxide semiconductor layer, and a source and drain on opposite sides of the channel layer. The first oxide semiconductor layer may have relatively large crystal grains compared to the second oxide semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.