Semiconductor device
US8159027B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 29, 2009 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Mar 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A semiconductor device including: a SiC substrate; an AlGaN layer formed on the SiC substrate; a source electrode and a drain electrode formed on the AlGaN layer so as to be spaced from each other; an insulation film formed between the source electrode and the drain electrode and having a band-like opening in parallel to the source electrode and the drain electrode; a gate electrode formed at the opening in the insulation film; and a drain-side field plate electrode formed integrally with the gate electrode on the drain electrode side of the gate electrode and having a drain electrode side end portion spaced from the insulation film, thus restraining degradation in performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.