Stack structure comprising epitaxial graphene, method of forming the stack structure, and electronic device comprising the stack structure
US8159037B2 · kind B2 · utility
9Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2008 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Sep 12, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12674
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a stack structure including an epitaxial graphene, a method of forming the stack structure, and an electronic device including the stack structure. The stack structure includes: a Si substrate; an under layer formed on the Si substrate; and at least one epitaxial graphene layer formed on the under layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.