Power semiconductor module featuring resiliently supported substrates and method for fabricating a power semiconductor module

US8159822B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Peter Kanschat · Soest, DE
• Olaf Hohlfeld · Warstein, DE
• Thilo Stolze · Arnsberg, DE

Key dates

• Filing date: May 27, 2010
• Grant date: Apr 17, 2012
• Expiry date: Oct 13, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/19107
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to a power semiconductor module including a module housing and at least one substrate populated with at least one power semiconductor chip. The module housing has a bottom side and a top side spaced away from the bottom side in a positive vertical direction. In addition, the substrate has a bottom side facing away from an interior of the module housing. The substrate is arranged in an opening of the module housing configured in its bottom side and attached to the module housing by a resilient bonding agent for freedom of movement of the substrate parallel to the vertical direction in relation to the module housing. In the non-mounted condition of the power semiconductor module, the substrate assumes a resting position in relation to the module housing. To deflect the substrate from the resting position parallel to the vertical direction, a deflection force of 0.1 N to 100 N per mm is applied.