High speed and low loss GeSi/Si electro-absorption light modulator and method of fabrication using selective growth
US8160404B2 · kind B2 · utility
50Cited by
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17Claims
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Key dates
| Filing date | Nov 20, 2006 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Sep 6, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic device includes an input waveguide structure that receives an input optical signal. A GeSi/Si waveguide structure receives from the input waveguide the input optical signal and performs selective optoelectronic operations on the input optical signal. The GeSi/Si waveguide structure outputs an optical or electrical output signal associated with the selective optoelectronic operations performed on the input optical signal. An output waveguide structure receives the output optical signal from the GeSi/Si waveguide structure and provides the optical output signal for further processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.