Backside illuminated image sensor
US8163591B2 · kind B2 · utility
4Cited by
4References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2010 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Nov 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8067
Abstract
A backside illuminated image sensor includes a photodiode, formed below the top surface of a semiconductor substrate, for receiving light illuminated from the backside of the semiconductor substrate to generate photoelectric charges, a reflecting gate, formed on the photodiode over the front upper surface of the semiconductor substrate, for reflecting light illuminated from the backside of the substrate and receiving a bias to control a depletion region of the photodiode, and a transfer gate for transferring photoelectric charges from the photodiode to a sensing node of a pixel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.