Enhancing NAND flash floating gate performance

US8163626B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Johanes Swenburg · Los Gatos, US
• David Chu · Wilmington, US
• Theresa Kramer Guarini · San Jose, US
• Yonah Cho · Sunnyvale, US
• Udayan Ganguly · San Jose, US
• Lucien Date · Ottignies, BE

Key dates

• Filing date: Jun 15, 2010
• Grant date: Apr 24, 2012
• Expiry date: Jul 24, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/911

Abstract

Embodiments described herein generally relate to flash memory devices and methods for manufacturing flash memory devices. In one embodiment, a method for selective removal of nitrogen from the nitrided areas of a substrate is provided. The method comprises positioning a substrate comprising a material layer disposed adjacent to an oxide containing layer in a processing chamber, exposing the substrate to a nitridation process to incorporate nitrogen onto the material layer and the exposed areas of the oxide containing layer, and exposing the nitrided material layer and the nitrided areas of the oxide containing layer to a gas mixture comprising a quantity of a hydrogen containing gas and a quantity of an oxygen containing gas to selectively remove nitrogen from the nitrided areas of the oxide containing layer relative to the nitrided material layer using a radical oxidation process.