SONOS type stacks for nonvolatile change trap memory devices and methods to form the same

US8163660B2 · kind B2 · utility

Assignee

• Cypress Semiconductor Corporation · US

Inventors

• Helmut Puchner · Santa Clara, US
• Igor Polishchuk · Fremont, US
• Sagy Levy · Jerusalem, IL

Key dates

• Filing date: Mar 27, 2009
• Grant date: Apr 24, 2012
• Expiry date: Sep 23, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/685

Abstract

A method for fabricating a nonvolatile charge trap memory device is described. The method includes forming a first oxide layer on a surface of a substrate. The first oxide layer is exposed to a first decoupled plasma nitridation process having a first bias. Subsequently, a charge-trapping layer is formed on the first oxide layer. The charge-trapping layer is exposed to an oxidation process and then to a second decoupled plasma nitridation process having a second, different, bias.