Photodiode with multi-epi films for image sensor
US8164124B2 · kind B2 · utility
7Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 2007 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Jan 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate; a first epitaxy semiconductor layer disposed on the semiconductor substrate and having a first type of dopant and a first doping concentration; a second epitaxy semiconductor layer disposed over the first epitaxy semiconductor layer and having the first type of dopant and a second doping concentration less than the first doping concentration; and an image sensor on the second epitaxy semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.