Bonding silicon silicon carbide to glass ceramics
US8168017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2010 |
| Grant date | May 1, 2012 |
| Priority date | — |
| Expiry date | Jul 19, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24744
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer chuck for use in a lithographic apparatus, which includes a low-thermal expansion glass ceramic substrate, a silicon silicon carbide layer, and a bonding layer comprising silicate having a strength of at least about 5 megapascals, the bonding layer attaching the silicon silicon carbide layer to the substrate is described. Also, a method of forming a wafer chuck for use in a lithographic apparatus, which includes coating a portion of one or both of a low-thermal expansion glass ceramic substrate and a silicon silicon carbide layer with a bonding solution, and contacting the substrate and the silicon silicon carbide layer to bond the substrate and the silicon silicon carbide layer together is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.