Etching methods and methods of manufacturing a CMOS image sensor using the same
US8168509B2 · kind B2 · utility
1Cited by
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16Claims
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Key dates
| Filing date | Dec 3, 2010 |
| Grant date | May 1, 2012 |
| Priority date | — |
| Expiry date | Dec 3, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/024
Abstract
In an etching method, a thin layer is formed on a first surface of a first substrate doped with first impurities having a first doping concentration. The thin layer is doped with second impurities having a second doping concentration lower than the first doping concentration. A second substrate is formed on the thin layer. A second surface of the first substrate is polished. The polished first substrate is cleaned using a cleaning solution including ammonia and deionized water. The cleaned first substrate is etched to expose the thin layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.