Manufacturing method of semiconductor device
US8168547B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 1, 2010 |
| Grant date | May 1, 2012 |
| Priority date | — |
| Expiry date | Apr 1, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The transistor characteristics of a MIS transistor provided with a gate insulating film formed to contain oxide with a relative dielectric constant higher than that of silicon oxide are improved. After a high dielectric layer made of hafnium oxide is formed on a main surface of a semiconductor substrate, the main surface of the semiconductor substrate is heat-treated in a non-oxidation atmosphere. Next, an oxygen supplying layer made of hafnium oxide deposited by ALD and having a thickness smaller than that of the high dielectric layer is formed on the high dielectric layer, and a cap layer made of tantalum nitride is formed. Thereafter, the main surface of the semiconductor substrate is heat-treated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.