Vertical junction field effect transistors and diodes having graded doped regions and methods of making

US8169022B2 · kind B2 · utility

Assignee

• SS SC IP, LLC · US

Inventors

• Lin Cheng · Chapel Hill, US
• Michael S. Mazzola · Ocean Springs, US

Key dates

• Filing date: Jun 18, 2010
• Grant date: May 1, 2012
• Expiry date: Oct 26, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs) or diodes such as junction barrier Schottky (JBS) diodes or PiN diodes. The devices have graded p-type semiconductor layers and/or regions formed by epitaxial growth. The methods do not require ion implantation. The devices can be made from a wide-bandgap semiconductor material such as silicon carbide (SiC) and can be used in high temperature and high power applications.