Inventor · Chapel Hill, NC, US

Lin Cheng

48Patents

8h-index

18Co-inventors

72Inventor score

Filing activity: Dec 27, 1995 → Jun 3, 2021

Most-cited inventions

Patent	Title	Area	Cited by	Status
US5659929A	Multi-function hinge structure	Fixed Constructions	18	Expired
US9318597B2	Layout configurations for integrating schottky contacts into a power transistor device	Electricity	13	Active
USD911835S1	Folding gift box	General	12	Active
US7638379B2	Vertical-channel junction field-effect transistors having buried gates and methods of making	Electricity	12	Active
USD875993S1	Bird table lamp	General	11	Active
US9012984B2	Field effect transistor devices with regrown p-layers	Electricity	10	Active
US9142662B2	Field effect transistor devices with low source resistance	Electricity	9	Active
US9029945B2	Field effect transistor devices with low source resistance	Electricity	8	Active
US8384182B2	Junction barrier schottky rectifiers having epitaxially grown P+-N methods of making	Electricity	8	Active
US9142668B2	Field effect transistor devices with buried well protection regions	Electricity	8	Active
US9331197B2	Vertical power transistor device	Electricity	7	Active
US9741842B2	Vertical power transistor device	Electricity	6	Active
US9484413B2	Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions	Electricity	6	Active
USD864904S1	Wireless loudspeaker	General	6	Active
USD974166S1	Box for storage macaron	General	5	Active
USD910900S1	Dog shaped light with speaker	General	5	Active
US9306061B2	Field effect transistor devices with protective regions	Electricity	4	Active
US7604306B1	Reticle box transport cart	Performing Operations; Transporting	4	Expired
US9425265B2	Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure	Electricity	4	Active
US9240476B2	Field effect transistor devices with buried well regions and epitaxial layers	Electricity	4	Active
US8169022B2	Vertical junction field effect transistors and diodes having graded doped regions and methods of making	Electricity	3	Active
US9515199B2	Power semiconductor devices having superjunction structures with implanted sidewalls	Electricity	3	Active
US8587024B2	Vertical junction field effect transistors and bipolar junction transistors	Electricity	3	Active
US8928074B2	Vertical junction field effect transistors and diodes having graded doped regions and methods of making	Electricity	3	Active
US9570570B2	Enhanced gate dielectric for a field effect device with a trenched gate	Electricity	2	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.