Positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode
US8169057B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2008 |
| Grant date | May 1, 2012 |
| Priority date | — |
| Expiry date | Aug 1, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/983
Abstract
A positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode includes a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate is of a first conductivity. The PIN/NIP diode includes at least one trench formed in the first main surface which defines at least one mesa. The trench extends to a first depth position in the semiconductor substrate. The PIN/NIP diode includes a first anode/cathode layer proximate the first main surface and the sidewalls and the bottom of the trench. The first anode/cathode layer is of a second conductivity opposite to the first conductivity. The PIN/NIP diode includes a second anode/cathode layer proximate the second main surface, a first passivation material lining the trench and a second passivation material lining the mesa. The second anode/cathode layer is the first conductivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.