Semiconductor device

US8169070B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gerhard Poeppel · Duggendorf, DE
• Irmgard Escher-Poeppel · Regensburg, DE

Key dates

• Filing date: May 15, 2009
• Grant date: May 1, 2012
• Expiry date: Oct 13, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H03H9/0547
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The semiconductor device comprises a semiconductor chip defining a first face and a second face opposite to the first face, the semiconductor chip comprising at least one contact element on the first face of the semiconductor chip, an encapsulating body encapsulating the semiconductor chip, the encapsulating body having a first face and a second face opposite to the first face, a redistribution layer extending over the semiconductor chip and the first face of the encapsulating body and containing a metallization layer comprising contact areas connected with the contact elements of the semiconductor chip, and an array of external contact elements located on the second phase of the encapsulating body.