System and method for writing data to magnetoresistive random access memory cells
US8169815B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2009 |
| Grant date | May 1, 2012 |
| Priority date | — |
| Expiry date | Dec 25, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Magnetic random access memory (MRAM) cell with a thermally assisted switching writing procedure and methods for manufacturing and using same. The MRAM cell includes a magnetic tunnel junction that has at least a first magnetic layer, a second magnetic layer, and an insulating layer disposed between the first and a second magnetic layers. The MRAM cell further includes a select transistor and a current line electrically connected to the junction. The current line advantageously can support a plurality of MRAM operational functions. The current line can fulfill a first function for passing a first portion of current for heating the junction and a second function for passing a second portion of current in order to switch the magnetization of the first magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.