Fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory
US8169816B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2009 |
| Grant date | May 1, 2012 |
| Priority date | — |
| Expiry date | Sep 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3263
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A cladding structure for a conductive line used to switch a free layer in a MTJ is disclosed and includes two cladding sidewalls on two sides of the conductive line, a top cladding portion on a side of the conductive line facing away from the MTJ, and a highly conductive, non-magnetic spacing control layer formed between the MTJ and conductive line. The spacing control layer has a thickness of 0.02 to 0.12 microns to maintain the distance separating free layer and conductive line between 0.03 and 0.15 microns. The spacing control layer is aligned parallel to the conductive line and contacts a plurality of MTJ elements in a row of MRAM cells. Half-select error problems are avoided while maintaining high write efficiency. A spacing control layer may be formed between a word line and a bottom electrode in a top pinned layer or dual pinned layer configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.