Patent · US Active

De-fluoridation process

US8172948B2 · kind B2 · utility

4Cited by

26References

20Claims

0Family size

Assignee

Lam Research Corporation · US

Inventors

Dongho Heo · Fremont, US
Jisoo Kim · Pleasanton, US
S. M. Reza Sadjadi · Saratoga, US

Key dates

Filing date	Nov 1, 2007
Grant date	May 8, 2012
Priority date	—
Expiry date	Feb 8, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02274
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A fluorine-containing conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Fluorine is removed from the conformal layer, while the remaining conformal layer is left in place. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.