Method for fabricating metal redistribution layer
US8173539B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2011 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Apr 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating a metal redistribution layer is described. A first opening and a second opening are formed in a dielectric layer over a first region and a second region thereof, respectively. A plurality of third openings are formed in the dielectric layer exposed by the first opening in the first region and a plurality of fourth openings are formed in the dielectric layer exposed by the second opening in the second region. A metal material is formed over the dielectric layer and in the first, second, third and fourth openings. A plurality of recesses is formed in the metal materials overlying the third and fourth openings. The metal material in the first region is patterned by using the recesses formed in portions of the metal material overlying the fourth openings in the second region as an alignment mark to form a metal redistribution layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.