Patent · US Active

Method for the fabrication of a transistor gate using at least one electron beam

US8173545B2 · kind B2 · utility

0Cited by

1References

12Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Thomas Ernst · Morette, FR
Stefan Landis · Tullins, FR

Key dates

Filing date	May 3, 2007
Grant date	May 8, 2012
Priority date	—
Expiry date	Aug 31, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/32051
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A microelectronic method for the fabrication of a transistor gate using a precursor material that is suitable for being broken down into at least one metallic material after having been exposed to an electron beam. The invention applies in particular to the fabrication of multi-channel transistors, of the FinFET, suspended-channel, ITS or GAA type.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.