Epitaxial wafer and production method thereof
US8173553B2 · kind B2 · utility
4Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2009 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Oct 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxial film; and a slip is prevented from forming in an external peripheral portion of a wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.