Method of depositing dielectric film having Si-N bonds by modified peald method
US8173554B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2010 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Nov 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.