Integrating three-dimensional high capacitance density structures
US8174017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2006 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Jun 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/0315
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed are three-dimensional dielectric structures on high surface area electrodes and fabrication methods. Exemplary structures comprise a copper foil substrate, trench electrodes or high surface area porous electrode structures formed on the substrate, a insulating thin film formed on the surface and laminating the foil on a organic substrate. A variety of materials may be used to make the films including perovksite ceramics such as barium titanate, strontium titanate, barium strontium titanate (BST), lead zirconate titanate (PZT); other intermediate dielectric constant films such as zinc oxide, aluminum nitride, silicon nitride; typical paraelectrics such as tantalum oxide, alumina, and titania. The films may be fabricated using sol-gel, hydrothermal synthesis, anodization or vapor deposition techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.